advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower on-resistance r ds(on) 18m rohs compliant & halogen-free i d 32.4a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.2 /w rthj-a 40 /w data and specifications subject to change without notice operating junction temperature range continuous drain current, v gs @10v total power dissipation 3 3.13 pulsed drain current 1 120 thermal data parameter storage temperature range total power dissipation 39 continuous drain current, v gs @10v 32.4 rating drain-source voltage 60 gate-source voltage + 20 201208141 1 AP55T06GS-HF -55 to 150 halogen-free product -55 to 150 20.4 maximum thermal resistance, junction-ambient (pcb mount) 3 parameter g d s a p55t06 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-263 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. g d s to-263(s)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =24a - - 18 m ? v gs =4.5v, i d =16a - - 30 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =24a - 24 - s i dss drain-source leakage current v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge i d =24a - 16 25.6 nc q gs gate-source charge v ds =48v - 4 - nc q gd gate-drain ("miller") charge v gs =4.5v - 11 - nc t d(on) turn-on delay time v ds =30v - 9 - ns t r rise time i d =24a - 44 - ns t d(off) turn-off delay time r g =1 -22- ns t f fall time v gs =10v - 6 - ns c iss input capacitance v gs =0v - 1200 1920 pf c oss output capacitance v ds =25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.7 3.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =24a, v gs =0v - - 1.3 v t rr reverse recovery time i s =10a, v gs =0v - 30 - ns q rr reverse recovery charge di/dt=100a/s - 34 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP55T06GS-HF
a p55t06gs-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 120 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0 20 40 60 80 100 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =24a v g =10v 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 12 16 20 24 28 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =16a t c =25 o c i d =250ua
AP55T06GS-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. maximum continuous drain current fig 12. transfer characteristics v.s. case temperature 4 0 2 4 6 8 10 0 102030 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =24a v ds =48v 0 400 800 1200 1600 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc 0 8 16 24 32 40 25 50 75 100 125 150 t c , case temperature ( o c ) i d , drain current (a) 0 20 40 60 80 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v t j = -40 o c operation in this area limited by r ds(on)
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